Invention Grant
US09431112B2 Semiconductor memory device including strings including memory cell transistors
有权
半导体存储器件包括包含存储单元晶体管的串
- Patent Title: Semiconductor memory device including strings including memory cell transistors
- Patent Title (中): 半导体存储器件包括包含存储单元晶体管的串
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Application No.: US14200641Application Date: 2014-03-07
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Publication No.: US09431112B2Publication Date: 2016-08-30
- Inventor: Hiroshi Sukegawa , Ikuo Magaki , Tokumasa Hara , Shirou Fujita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/08 ; G11C16/34

Abstract:
A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.
Public/Granted literature
- US20150036430A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2015-02-05
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