Invention Grant
- Patent Title: Semiconductor device with low contact resistance SIC region
- Patent Title (中): 具有低接触电阻SIC区域的半导体器件
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Application No.: US14107552Application Date: 2013-12-16
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Publication No.: US09431246B2Publication Date: 2016-08-30
- Inventor: Tatsuo Shimizu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-286137 20121227
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/265 ; H01L21/02 ; H01L21/04 ; H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L29/10 ; H01L29/16 ; H01L21/283 ; H01L29/41
Abstract:
According to one embodiment, a semiconductor device includes a first semiconductor part and a conductive electrode. The first semiconductor part is made of SiC. The SiC contains a first element as an n-type or p-type impurity. The first semiconductor part has a first interface part. The first interface part is configured to have maximum area density of the first element. The c conductive electrode is electrically connected to the first interface part.
Public/Granted literature
- US20140183561A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-07-03
Information query
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