Invention Grant
US09431261B2 Removal of defects by in-situ etching during chemical-mechanical polishing processing
有权
在化学机械抛光加工过程中通过原位蚀刻去除缺陷
- Patent Title: Removal of defects by in-situ etching during chemical-mechanical polishing processing
- Patent Title (中): 在化学机械抛光加工过程中通过原位蚀刻去除缺陷
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Application No.: US14556337Application Date: 2014-12-01
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Publication No.: US09431261B2Publication Date: 2016-08-30
- Inventor: Scott B. Singer , Joseph C. Boisvert , Daniel C. Law , Christopher M. Fetzer
- Applicant: The Boeing Company
- Applicant Address: US IL Chicago
- Assignee: THE BOEING COMPANY
- Current Assignee: THE BOEING COMPANY
- Current Assignee Address: US IL Chicago
- Agency: MH2 Technology Law Group, LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; C09G1/02
Abstract:
Technologies for a process used to reduce the height of a raised profile of a device. One or more raised profiles on one or more layers of a device are removed using a combined chemical-mechanical polishing/etching process. In some implementations, a protective layer is applied to a top layer of a device grown on a substrate. A combined chemical-mechanical polishing/etching process may commence whereby one or more raised profiles of the protective layer are removed through a planarization process, exposing at least a portion of a raised profile of a layer below the protective layer. Material may be removed using an etchant to reduce the height of the raised profile.
Public/Granted literature
- US20160155644A1 Removal Of Defects By In-Situ Etching During Chemical-Mechanical Polishing Processing Public/Granted day:2016-06-02
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