Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13690418Application Date: 2012-11-30
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Publication No.: US09431285B2Publication Date: 2016-08-30
- Inventor: Naoyoshi Tamura , Keita Nishigaya , Mitsuaki Hori , Hiroe Kawamura
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-016282 20120130
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/76 ; H01L21/302 ; H01L21/02 ; H01L21/324 ; H01L21/762 ; H01L21/311 ; H01L21/28 ; H01L29/66
Abstract:
A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.
Public/Granted literature
- US09390960B2 Method of manufacturing semiconductor device Public/Granted day:2016-07-12
Information query
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