Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
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Application No.: US14731027Application Date: 2015-06-04
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Publication No.: US09431290B2Publication Date: 2016-08-30
- Inventor: Yasushi Niimura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2013-080337 20130408; JP2013-088295 20130419; JP2014-031306 20140221
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/42 ; H01L21/765 ; H01L21/263 ; H01L21/28 ; H01L21/265 ; H01L29/06 ; H01L21/66

Abstract:
A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations.
Public/Granted literature
- US20150270157A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2015-09-24
Information query
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