Invention Grant
US09431348B2 Semiconductor device manufacturing method and manufacturing device for marking a crystal defect
有权
用于标记晶体缺陷的半导体器件制造方法和制造装置
- Patent Title: Semiconductor device manufacturing method and manufacturing device for marking a crystal defect
- Patent Title (中): 用于标记晶体缺陷的半导体器件制造方法和制造装置
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Application No.: US14505589Application Date: 2014-10-03
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Publication No.: US09431348B2Publication Date: 2016-08-30
- Inventor: Atsushi Tanaka , Takashi Tsuji
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-104222 20120427
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/66 ; G01N21/95 ; H01L21/67 ; H01L29/16 ; H01L29/20

Abstract:
A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker. Therefore, it is possible to detect the position of a semiconductor chip including the crystal defect among the semiconductor chips manufactured on the semiconductor substrate. As a result, it is possible to easily detect the position of the semiconductor device including the position of the crystal defect on the semiconductor substrate.
Public/Granted literature
- US20150024520A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND MANUFACTURING DEVICE Public/Granted day:2015-01-22
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