Invention Grant
- Patent Title: Selective area heating for 3D chip stack
- Patent Title (中): 3D芯片堆叠的选择性区域加热
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Application No.: US14705005Application Date: 2015-05-06
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Publication No.: US09431366B2Publication Date: 2016-08-30
- Inventor: Mario J. Interrante , Katsuyuki Sakuma
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly; Steven Meyers
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L23/498 ; H01L21/48

Abstract:
A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat and first uniform pressure; joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure; heating the 3D package, the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where the first and second selective non-uniform heats being less that the reflow temperature of the first and second pluralities of solder bumps, respectively.
Public/Granted literature
- US20150235986A1 SELECTIVE AREA HEATING FOR 3D CHIP STACK Public/Granted day:2015-08-20
Information query
IPC分类: