A method for forming a semiconductor device comprises forming a first fin and a second fin on a semiconductor substrate, forming a sacrificial gate stack over a channel region of the first fin and the second fin, depositing a layer of spacer material over the first fin and the second fin, depositing a layer of dielectric material over the layer of spacer material, removing a portion of the dielectric material to form a first cavity that exposes a portion of the first fin, epitaxially growing a first semiconductor material on the exposed portion of the first fin to form a source/drain region on the first fin, depositing a protective layer on the source/drain region on the first fin, removing a portion of the dielectric material to form a second cavity that exposes a portion of the second fin, and epitaxially growing a source/drain region on the second fin.