Invention Grant
- Patent Title: Semiconductor light trap device
- Patent Title (中): 半导体光阱装置
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Application No.: US14624679Application Date: 2015-02-18
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Publication No.: US09431554B2Publication Date: 2016-08-30
- Inventor: Thoralf Kautzsch
- Applicant: IINFINEON TECHNOLOGIES DRESDEN GMBH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Schiff Hardin LLP
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0232 ; H01L31/0352 ; H01L31/0236

Abstract:
Buried structures for silicon devices which alter light paths and thereby form light traps. The lights traps couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device.
Public/Granted literature
- US20150162464A1 SEMICONDUCTOR LIGHT TRAP DEVICES, SYSTEMS AND METHODS Public/Granted day:2015-06-11
Information query
IPC分类: