Invention Grant
- Patent Title: Hybrid non-volatile memory device and method for manufacturing such a device
- Patent Title (中): 混合非易失性存储器件及其制造方法
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Application No.: US14887687Application Date: 2015-10-20
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Publication No.: US09431608B2Publication Date: 2016-08-30
- Inventor: Luca Perniola , Bernard Dieny
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: FR1460078 20141020
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A method for manufacturing a hybrid non-volatile memory device includes forming first conductive pads; depositing a first conductive layer on a second area of the substrate; etching the first conductive layer to obtain second conductive pads, the second conductive pads having a section at their base smaller than at their top; protecting the upper face of the second conductive pads; oxidizing the substrate so that an insulating material layer covers the upper face of the first conductive pads and sides of the second conductive pads; depositing an oxide layer at the tops of the first conductive pads, resulting in memory elements of a first type supported by the first conductive pads; and forming memory elements of a second type at the tops of the second conductive pads. Each memory element of the second type is supported by one of the second conductive pads.
Public/Granted literature
- US20160111642A1 HYBRID NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE Public/Granted day:2016-04-21
Information query
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