Invention Grant
US09431608B2 Hybrid non-volatile memory device and method for manufacturing such a device 有权
混合非易失性存储器件及其制造方法

Hybrid non-volatile memory device and method for manufacturing such a device
Abstract:
A method for manufacturing a hybrid non-volatile memory device includes forming first conductive pads; depositing a first conductive layer on a second area of the substrate; etching the first conductive layer to obtain second conductive pads, the second conductive pads having a section at their base smaller than at their top; protecting the upper face of the second conductive pads; oxidizing the substrate so that an insulating material layer covers the upper face of the first conductive pads and sides of the second conductive pads; depositing an oxide layer at the tops of the first conductive pads, resulting in memory elements of a first type supported by the first conductive pads; and forming memory elements of a second type at the tops of the second conductive pads. Each memory element of the second type is supported by one of the second conductive pads.
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