Invention Grant
- Patent Title: Doherty power amplifier with tunable impedance load
- Patent Title (中): Doherty功率放大器,具有可调阻抗负载
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Application No.: US14103089Application Date: 2013-12-11
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Publication No.: US09431969B2Publication Date: 2016-08-30
- Inventor: Hamhee Jeon , Kevin Wesley Kobayashi
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F1/07
- IPC: H03F1/07 ; H03F1/02 ; H03F3/195

Abstract:
Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
Public/Granted literature
- US09391564B2 Doherty power amplifier with tunable impedance load Public/Granted day:2016-07-12
Information query
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