Invention Grant
- Patent Title: Cap, semiconductor device including the cap, and manufacturing method therefor
- Patent Title (中): 帽,包括帽的半导体器件及其制造方法
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Application No.: US14607260Application Date: 2015-01-28
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Publication No.: US09434604B2Publication Date: 2016-09-06
- Inventor: Kosuke Fujihara , Hideaki Sakaguchi
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Applicant Address: JP Nagano
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JP2014-054009 20140317
- Main IPC: B81B7/00
- IPC: B81B7/00 ; H01L31/0203 ; H01S5/022 ; H01L33/58

Abstract:
A cap for installing a semiconductor device that can send or receive a light having a predetermined wavelength, the cap including a recess for installing the semiconductor device, the recess being defined by a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the through-hole having an upper end part of the through-hole on a side of the upper surface of the silicon substrate and a lower end part of the through-hole on a side of the lower surface of the silicon substrate, and a coating film formed to cover the upper surface of the silicon substrate and the upper end part of the through-hole, wherein the coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.
Public/Granted literature
- US20150263238A1 CAP, SEMICONDUCTOR DEVICE INCLUDING THE CAP, AND MANUFACTURING METHOD THEREFOR Public/Granted day:2015-09-17
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