Invention Grant
- Patent Title: Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
- Patent Title (中): 微波等离子体和紫外线辅助沉积装置及其材料沉积方法
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Application No.: US14149122Application Date: 2014-01-07
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Publication No.: US09435031B2Publication Date: 2016-09-06
- Inventor: Alfred Grill , Son V. Nguyen , Deepika Priyadarshini
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/48 ; C23C16/515 ; C23C16/511 ; C23C16/455 ; C23C16/14 ; C23C16/27 ; C23C16/34 ; C23C16/452

Abstract:
A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.
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