Invention Grant
US09435051B2 Bismuth-doped semi-insulating group III nitride wafer and its production method
有权
铋掺杂半绝缘III族氮化物晶片及其制备方法
- Patent Title: Bismuth-doped semi-insulating group III nitride wafer and its production method
- Patent Title (中): 铋掺杂半绝缘III族氮化物晶片及其制备方法
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Application No.: US14981292Application Date: 2015-12-28
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Publication No.: US09435051B2Publication Date: 2016-09-06
- Inventor: Tadao Hashimoto , Edward Letts , Sierra Hoff
- Applicant: SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
- Applicant Address: US CA Buellton KR Seoul
- Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee: SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- Current Assignee Address: US CA Buellton KR Seoul
- Agency: Strategic Innovation IP Law Offices, P.C.
- Main IPC: C30B7/10
- IPC: C30B7/10 ; B24B37/04 ; B28D5/00 ; C30B29/40 ; H01L21/02 ; H01L29/20 ; H01L29/207 ; H01L29/22 ; C30B9/00 ; C30B28/04
Abstract:
The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
Public/Granted literature
- US20160130720A1 BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD Public/Granted day:2016-05-12
Information query
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