Invention Grant
- Patent Title: Arrangement for manufacturing crystalline silicon ingots
- Patent Title (中): 制造晶体硅锭的安排
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Application No.: US14112858Application Date: 2012-04-18
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Publication No.: US09435052B2Publication Date: 2016-09-06
- Inventor: Egor Vladimirov , Alexandre Teixeira , Kai Johansen , Pouria Homayonifar
- Applicant: Egor Vladimirov , Alexandre Teixeira , Kai Johansen , Pouria Homayonifar
- Applicant Address: SG Singapore
- Assignee: REC SOLAR PTE. LTD.
- Current Assignee: REC SOLAR PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: GB1106559.6 20110419
- International Application: PCT/EP2012/057063 WO 20120418
- International Announcement: WO2012/143385 WO 20121026
- Main IPC: C30B29/06
- IPC: C30B29/06 ; C30B11/00
Abstract:
The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.
Public/Granted literature
- US20140123892A1 ARRANGEMENT FOR MANUFACTURING CRYSTALLINE SILICON INGOTS Public/Granted day:2014-05-08
Information query
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