Invention Grant
- Patent Title: Integrated circuit protection during high-current ESD testing
- Patent Title (中): 在大电流ESD测试期间集成电路保护
-
Application No.: US13446394Application Date: 2012-04-13
-
Publication No.: US09435841B2Publication Date: 2016-09-06
- Inventor: Shunhua Chang , James Paul Di Sarro , Robert J. Gauthier, Jr. , Nathan Jack , Souvick Mitra
- Applicant: Shunhua Chang , James Paul Di Sarro , Robert J. Gauthier, Jr. , Nathan Jack , Souvick Mitra
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly; Steven Meyers
- Main IPC: H02H9/00
- IPC: H02H9/00 ; G01R31/00 ; H02H9/04 ; G01R31/28 ; H01L27/02 ; H05K9/00

Abstract:
A method of protecting devices within an integrated circuit during electro-static discharge (ESD) testing using an ESD test system is provided. The method includes applying a direct current (DC) bias voltage to an input of at least one device of the integrated circuit and applying an ESD simulated signal to at least one other input of the integrated circuit. The applied ESD simulated signal is conducted along a first current path to a first ground, while a low-current signal associated with the at least one device is conducted along a second current path to the second ground. The DC bias voltage is maintained between the input of the at least one device and the second ground at a substantially constant value in response to a signal variation on the second ground that results from the applied ESD simulated signal.
Public/Granted literature
- US20130271883A1 INTEGRATED CIRCUIT PROTECTION DURING HIGH-CURRENT ESD TESTING Public/Granted day:2013-10-17
Information query