Invention Grant
US09435847B2 Method for testing special pattern and probe card defect in wafer testing
有权
在晶圆测试中测试特殊图案和探针卡缺陷的方法
- Patent Title: Method for testing special pattern and probe card defect in wafer testing
- Patent Title (中): 在晶圆测试中测试特殊图案和探针卡缺陷的方法
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Application No.: US14316631Application Date: 2014-06-26
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Publication No.: US09435847B2Publication Date: 2016-09-06
- Inventor: Shih-Hsien Chang , Kai-Wen Tu , Yen Lin , Ching-Ren Cheng
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G01R31/01
- IPC: G01R31/01 ; G01R31/26 ; G01R31/319 ; G01R31/28 ; G01R31/02 ; G01R31/3185 ; G01R31/265 ; G01R1/04

Abstract:
Methods for testing a special pattern and testing a probe card defect in wafer testing are provided. In the method for testing the special pattern, a wafer is divided into multiple testing partitions, in which each of the testing partitions includes multiple dies. The dies in each testing partition of the wafer are respectively tested by multiple sites of the probe card to obtain a testing map. Then, a number of the dies having defects and a number of the dies without defect within each of the testing partitions in the testing map are accumulated to construct chi-square test and calculate a maximum P-value. Finally, it is determined whether a minimum of the maximum P-values of all of the testing partitions is smaller than a certain predetermined threshold. If the minimum is smaller than the threshold, it is determined that the testing map of the wafer contains the special pattern.
Public/Granted literature
- US20150377951A1 METHOD FOR TESTING SPECIAL PATTERN AND PROBE CARD DEFECT IN WAFER TESTING Public/Granted day:2015-12-31
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