Invention Grant
- Patent Title: Method for testing semiconductor dies and a test apparatus
- Patent Title (中): 半导体管芯的测试方法和试验装置
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Application No.: US14319268Application Date: 2014-06-30
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Publication No.: US09435849B2Publication Date: 2016-09-06
- Inventor: Erwin Thalmann , Michael Leutschacher , Christian Musshoff , Stefan Kramp
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R1/073

Abstract:
A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location.
Public/Granted literature
- US20150377954A1 Method for Testing Semiconductor Dies and a Test Apparatus Public/Granted day:2015-12-31
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