Invention Grant
- Patent Title: Multi-bit magnetic memory cell
- Patent Title (中): 多位磁存储单元
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Application No.: US14887351Application Date: 2015-10-20
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Publication No.: US09435867B2Publication Date: 2016-09-06
- Inventor: Alexander Gerber , Amir Segal
- Applicant: RAMOT AT TEL AVIV UNIVERSITY LTD.
- Applicant Address: IL Tel Aviv
- Assignee: RAMOT AT TEL AVIV UNIVERSITY LTD.
- Current Assignee: RAMOT AT TEL AVIV UNIVERSITY LTD.
- Current Assignee Address: IL Tel Aviv
- Agency: D. Kligler IP Services Ltd.
- Main IPC: G01R33/07
- IPC: G01R33/07 ; G11C11/16 ; G11C11/18 ; G01R15/20

Abstract:
Apparatus includes a first Hall sensor having a first terminal, a second terminal, a third terminal and a fourth terminal and a second Hall sensor having a fifth terminal, a sixth terminal, a seventh terminal and an eighth terminal. A conductor connects the third terminal to the fifth terminal. A processor is configured to measure a first potential between the fourth terminal and the sixth terminal while transferring a first current from the first terminal to the seventh terminal via the conductor, to measure a second potential between the first terminal and the seventh terminal while transferring a second current from the fourth terminal to the sixth terminal via the conductor, and to determine a resultant voltage generated by the first and second Hall sensors in response to the first and second potentials.
Public/Granted literature
- US20160041237A1 MULTI-BIT MAGNETIC MEMORY CELL Public/Granted day:2016-02-11
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