Invention Grant
- Patent Title: Composition for forming photosensitive resist underlayer film
- Patent Title (中): 用于形成光敏抗蚀剂下层膜的组合物
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Application No.: US13516304Application Date: 2010-12-06
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Publication No.: US09436085B2Publication Date: 2016-09-06
- Inventor: Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
- Applicant: Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2009-285573 20091216
- International Application: PCT/JP2010/071816 WO 20101206
- International Announcement: WO2011/074433 WO 20110623
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/30 ; G03F7/32 ; C08F12/24 ; C08F212/14 ; C08F220/56 ; G03F7/038

Abstract:
A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.
Public/Granted literature
- US20120251950A1 COMPOSITION FOR FORMING PHOTOSENSITIVE RESIST UNDERLAYER FILM Public/Granted day:2012-10-04
Information query
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