Invention Grant
- Patent Title: Band-gap reference voltage circuit
- Patent Title (中): 带隙基准电压电路
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Application No.: US14816262Application Date: 2015-08-03
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Publication No.: US09436204B2Publication Date: 2016-09-06
- Inventor: Terukazu Nagakura , Tadashi Matsuoka , Fuminori Morisawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2014-174415 20140828
- Main IPC: G05F3/08
- IPC: G05F3/08

Abstract:
A band-gap referenced voltage circuit with smaller parasitic resistance which brings reduced band-gap error is disclosed. This reduced error stems from the unique configuration of stacked diode and a shorter wiring line to a resistor. The band-gap referenced voltage circuit includes two diodes, an operational amplifier with non-inverting and inverting inputs and an output for the band-gap voltage output, and three resistors. Employing the stacked configuration of the diode with the top anode electrode, the wiring line which connects the non-inverting input of the operational amplifier and the voltage reference diode is made short. Then the resistance of the wiring line, called also parasitic resistance, would be small.
Public/Granted literature
- US20160062382A1 BAND-GAP REFERENCE VOLTAGE CIRCUIT Public/Granted day:2016-03-03
Information query
IPC分类: