Invention Grant
- Patent Title: Temperature and process compensated current reference circuits
- Patent Title (中): 温度和工艺补偿电流参考电路
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Application No.: US14519225Application Date: 2014-10-21
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Publication No.: US09436206B2Publication Date: 2016-09-06
- Inventor: Yong Feng Liu
- Applicant: STMicroelectronics (Shenzhen) R&D Co. Ltd
- Applicant Address: CN Shenzhen
- Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd
- Current Assignee: STMicroelectronics (Shenzhen) R&D Co. Ltd
- Current Assignee Address: CN Shenzhen
- Agency: Gardere Wynne Sewell LLP
- Priority: CN201410007047 20140102
- Main IPC: G05F3/20
- IPC: G05F3/20 ; G05F3/26 ; G05F1/46 ; G05F3/24

Abstract:
A reference current path carries a reference current. A first transistor is coupled to the reference current path. A second transistor is also coupled to the reference current path. The first and second transistors are connected in parallel to carry the reference current. The first transistor is biased by a first voltage (which is a bandgap voltage plus a threshold voltage). The second transistor is biased by a second voltage (which is a PTAT voltage plus a threshold voltage). The first and second transistors are thus biased by voltages having different and opposite temperature coefficients with a result that the temperature coefficients of the currents flowing in the first and second transistors are opposite and the reference current accordingly has a low temperature coefficient.
Public/Granted literature
- US20150185754A1 TEMPERATURE AND PROCESS COMPENSATED CURRENT REFERENCE CIRCUITS Public/Granted day:2015-07-02
Information query
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