Invention Grant
US09436549B2 Storage module and method for improved error correction by detection of grown bad bit lines
有权
存储模块和方法,用于通过检测生长的坏位线来改进纠错
- Patent Title: Storage module and method for improved error correction by detection of grown bad bit lines
- Patent Title (中): 存储模块和方法,用于通过检测生长的坏位线来改进纠错
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Application No.: US14502738Application Date: 2014-09-30
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Publication No.: US09436549B2Publication Date: 2016-09-06
- Inventor: Daniel E. Tuers , Abjiheet Manohar
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Priority: IN3759/CHE/2014 20140731
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/07 ; H03M13/11 ; H03M13/03 ; H03M13/37 ; G11C16/26 ; H03M13/15 ; H03M13/45 ; H03M13/00

Abstract:
In one embodiment, a storage module comprises a controller and a memory having a plurality of bit lines. The controller detects an uncorrectable error in a code word read from the memory, determines location(s) of grown bad bit line(s) that contributed to the error in the code word being uncorrectable, and uses the determined location(s) of the grown bad bit line(s) to attempt to correct the error in the code word.
Public/Granted literature
- US20160034353A1 Storage Module and Method for Improved Error Correction by Detection of Grown Bad Bit Lines Public/Granted day:2016-02-04
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