Invention Grant
- Patent Title: Method of dynamically selecting memory cell capacity
- Patent Title (中): 动态选择存储单元容量的方法
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Application No.: US14728900Application Date: 2015-06-02
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Publication No.: US09437254B2Publication Date: 2016-09-06
- Inventor: Federico Pio
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C5/14 ; G11C16/26 ; G11C16/12 ; G06F21/60 ; G11C16/06 ; G11C16/30 ; G11C7/22 ; G11C7/10 ; G11C14/00 ; G06F12/02 ; G11C16/10 ; G11C11/56
Abstract:
A method is provided for using a multi-level cell memory device. The method includes writing first data to a first portion of a memory array using a first number of state levels for memory cells of the first portion of the memory array. The method further includes re-writing second data to a second portion of the memory array using a second number of state levels for memory cells of the second portion of the memory array. The second number is different from the first number.
Public/Granted literature
- US20150262628A1 METHOD OF DYNAMICALLY SELECTING MEMORY CELL CAPACITY Public/Granted day:2015-09-17
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