Invention Grant
US09437257B2 Sensing circuit, memory device and data detecting method 有权
感应电路,存储器和数据检测方法

Sensing circuit, memory device and data detecting method
Abstract:
A sensing circuit includes a sensing resistor, a reference resistor and a comparator. The comparator has a first input coupled to the sensing resistor, a second input coupled to the reference resistor, and an output. The first input is configured to be coupled to a data bit line associated with a memory cell to receive a sensing input voltage caused by a cell current of the memory cell flowing through the sensing resistor. The second input is configured to be coupled to a reference bit line associated with a reference cell to receive a sensing reference voltage caused by a reference current of the reference cell flowing through the reference resistor. The comparator is configured to generate, at the output, an output signal indicating a logic state of data stored in the memory cell based on a comparison between the sensing input voltage and the sensing reference voltage.
Public/Granted literature
Information query
Patent Agency Ranking
0/0