Invention Grant
- Patent Title: Sensing circuit, memory device and data detecting method
- Patent Title (中): 感应电路,存储器和数据检测方法
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Application No.: US13765513Application Date: 2013-02-12
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Publication No.: US09437257B2Publication Date: 2016-09-06
- Inventor: Tien-Chun Yang , Yue-Der Chih , Chan-Hong Chern , Tao Wen Chung
- Applicant: Tien-Chun Yang , Yue-Der Chih , Chan-Hong Chern , Tao Wen Chung
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/00 ; G11C7/02 ; G11C7/06 ; G11C7/14 ; G11C13/00

Abstract:
A sensing circuit includes a sensing resistor, a reference resistor and a comparator. The comparator has a first input coupled to the sensing resistor, a second input coupled to the reference resistor, and an output. The first input is configured to be coupled to a data bit line associated with a memory cell to receive a sensing input voltage caused by a cell current of the memory cell flowing through the sensing resistor. The second input is configured to be coupled to a reference bit line associated with a reference cell to receive a sensing reference voltage caused by a reference current of the reference cell flowing through the reference resistor. The comparator is configured to generate, at the output, an output signal indicating a logic state of data stored in the memory cell based on a comparison between the sensing input voltage and the sensing reference voltage.
Public/Granted literature
- US20140185401A1 SENSING CIRCUIT, MEMORY DEVICE AND DATA DETECTING METHOD Public/Granted day:2014-07-03
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