Invention Grant
- Patent Title: Storage element and memory
- Patent Title (中): 存储元件和存储器
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Application No.: US14359488Application Date: 2012-11-19
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Publication No.: US09437267B2Publication Date: 2016-09-06
- Inventor: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2011-261853 20111130
- International Application: PCT/JP2012/007416 WO 20121119
- International Announcement: WO2013/080482 WO 20130606
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; H01L43/02 ; G11C11/56
Abstract:
A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
Public/Granted literature
- US09378794B2 Storage element and memory Public/Granted day:2016-06-28
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