Invention Grant
- Patent Title: Negative bitline boost scheme for SRAM write-assist
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Application No.: US14727931Application Date: 2015-06-02
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Publication No.: US09437281B2Publication Date: 2016-09-06
- Inventor: Wei-Jer Hsieh , Yangsyu Lin , Hsiao Wen Lu , Chiting Cheng , Jonathan Tsung-Yung Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/419 ; G11C7/12

Abstract:
A device includes a transistor switch coupled between a bit line voltage node and a ground node and a boost signal circuit coupled to a gate node of the transistor switch, where the boost signal circuit providing a boost signal responsive to a write enable signal. The device also includes a first delay element and a first capacitor in series with the first delay element. The first capacitor has a first end coupled to the bit line voltage node and a second end coupled to the gate node through the first delay element.
Public/Granted literature
- US20150262655A1 NEGATIVE BITLINE BOOST SCHEME FOR SRAM WRITE-ASSIST Public/Granted day:2015-09-17
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