A sense amplifier device for sensing a differential signal produced by a memory cell includes a first n-type metal-oxide-semiconductor field-effect transistor (NMOS) stack having multiple NMOS devices sharing a gate connection connected to a complementary data line; and a second NMOS stack having multiple NMOS devices sharing a gate connection connected to a true data line. At least one of the devices in the first stack has higher gate-to-source and drain-to-source voltages than a gate-to-source and drain-to-source voltages of at least one device in the second stack when the voltage of the complementary data line is higher than the true data line. At least one of the devices in the second stack has a higher gate-to-source and drain-to-source voltages than the gate-to-source and drain-to-source voltages of at least one device in the first stack when the voltage of the true data line is higher than the complementary data line.