Invention Grant
- Patent Title: Write and erase scheme for resistive memory device
- Patent Title (中): 电阻式存储器件的写和擦除方案
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Application No.: US14332092Application Date: 2014-07-15
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Publication No.: US09437297B2Publication Date: 2016-09-06
- Inventor: Hagop Nazarian , Sung Hyun Jo
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Crossbar, Inc.
- Current Assignee: Crossbar, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C29/50
Abstract:
A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
Public/Granted literature
- US20140328108A1 WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE Public/Granted day:2014-11-06
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