Invention Grant
US09437330B2 Memory device and memory system include hard repair mode and soft repair mode
有权
内存设备和内存系统包括硬修复模式和软修复模式
- Patent Title: Memory device and memory system include hard repair mode and soft repair mode
- Patent Title (中): 内存设备和内存系统包括硬修复模式和软修复模式
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Application No.: US14571047Application Date: 2014-12-15
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Publication No.: US09437330B2Publication Date: 2016-09-06
- Inventor: Ga-Ram Park , Jong-Yeol Yang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0120245 20140911
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C29/00 ; G11C17/16 ; G11C17/18 ; G11C7/20 ; G11C29/44 ; G11C29/04

Abstract:
A memory device includes: a non-volatile memory circuit suitable for storing hard repair data; a data bus suitable for transmitting the hard repair data during a boot-up operation, and transmitting soft repair data during a soft repair mode; a plurality of registers suitable for storing repair data transmitted through the data bus and activated when the transmitted repair data is stored; a control circuit suitable for selecting a register to store the transmitted repair data among the plurality of the registers, and during the soft repair mode, deactivating a register that stores the same data as the transmitted repair data; and a memory bank suitable for performing a repair operation based on the data stored in a register that is activated among the plurality of the registers.
Public/Granted literature
- US20160078968A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2016-03-17
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