Invention Grant
US09437421B2 Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
有权
基板处理装置，半导体装置的制造方法以及非暂时性的计算机可读记录介质
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
- Patent Title (中): 基板处理装置，半导体装置的制造方法以及非暂时性的计算机可读记录介质
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Application No.: US14162318Application Date: 2014-01-23
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Publication No.: US09437421B2Publication Date: 2016-09-06
- Inventor: Yuji Takebayashi , Masakazu Shimada , Atsushi Morikawa
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2013-016181 20130130; JP2014-005264 20140115
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; C23C16/00 ; H01L21/02 ; H01L21/67 ; C23C16/40 ; C23C16/452 ; C23C16/455
Abstract:
A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes.
Public/Granted literature
Information query
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