Invention Grant
US09437424B2 High mobility power metal-oxide semiconductor field-effect transistors
有权
高迁移率功率金属氧化物半导体场效应晶体管
- Patent Title: High mobility power metal-oxide semiconductor field-effect transistors
- Patent Title (中): 高迁移率功率金属氧化物半导体场效应晶体管
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Application No.: US12123664Application Date: 2008-05-20
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Publication No.: US09437424B2Publication Date: 2016-09-06
- Inventor: Deva Pattanayak , Kuo-In Chen , The-Tu Chau
- Applicant: Deva Pattanayak , Kuo-In Chen , The-Tu Chau
- Applicant Address: US CA Santa Clara
- Assignee: Vishay-Siliconix
- Current Assignee: Vishay-Siliconix
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/739 ; H01L29/04 ; H01L29/06 ; H01L29/423 ; H01L29/78
Abstract:
High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total “on”resistance of the device.
Public/Granted literature
- US20080220571A1 HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS Public/Granted day:2008-09-11
Information query
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