Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
- Patent Title (中): 具有具有增加的氢浓度的氧化物半导体层的半导体器件的制造方法
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Application No.: US14552064Application Date: 2014-11-24
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Publication No.: US09437428B2Publication Date: 2016-09-06
- Inventor: Masashi Oota , Noritaka Ishihara , Motoki Nakashima , Yoichi Kurosawa , Shunpei Yamazaki , Yasuharu Hosaka , Toshimitsu Obonai , Junichi Koezuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2013-248320 20131129; JP2014-033904 20140225; JP2014-107582 20140523
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L29/66 ; H01L29/786
Abstract:
To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.
Public/Granted literature
- US20150155169A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-06-04
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