Invention Grant
- Patent Title: Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method
- Patent Title (中): 多晶硅制造装置及多晶硅制造方法
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Application No.: US14130627Application Date: 2012-09-20
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Publication No.: US09437429B2Publication Date: 2016-09-06
- Inventor: Yasushi Kurosawa , Shigeyoshi Netsu , Naruhiro Hoshino
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Chiyoda-ku
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-204665 20110920
- International Application: PCT/JP2012/005966 WO 20120920
- International Announcement: WO2013/042361 WO 20130328
- Main IPC: C23C16/24
- IPC: C23C16/24 ; C23C16/46 ; C23C16/50 ; H01L21/20 ; C01B33/033 ; H01L21/02 ; C01B33/035 ; C23C16/44
Abstract:
In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a
Public/Granted literature
- US20140134832A1 POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD Public/Granted day:2014-05-15
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