Invention Grant
- Patent Title: Processing method for wafer having chamfered portion along the outer circumference thereof followed by thinning and separating
- Patent Title (中): 沿着其外周具有倒角部分的晶片的加工方法,然后进行变薄和分离
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Application No.: US13666365Application Date: 2012-11-01
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Publication No.: US09437439B2Publication Date: 2016-09-06
- Inventor: Karl Priewasser
- Applicant: Disco Corporation
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2011-244321 20111108
- Main IPC: H01L21/304
- IPC: H01L21/304 ; B24B7/22 ; H01L23/544 ; H01L21/683

Abstract:
A wafer processing method for reducing the thickness of a wafer to a predetermined thickness, the wafer having a chamfered portion along the outer circumference thereof. The wafer processing method includes a stacked wafer forming step of attaching a support substrate to the front side of the wafer to thereby form a stacked wafer, and a chamfered portion removing step of positioning a cutting blade having a rotation axis parallel to the stacking direction of the stacked wafer formed by the stacked wafer forming step so that the outer circumference of the cutting blade faces the chamfered portion of the wafer, and then making the cutting blade cut into the wafer from the outer circumference toward the center thereof to thereby partially remove the chamfered portion in the range corresponding to the predetermined thickness from the front side of the wafer.
Public/Granted literature
- US20130115861A1 PROCESSING METHOD FOR WAFER HAVING CHAMFERED PORTION ALONG THE OUTER CIRCUMFERENCE THEREOF Public/Granted day:2013-05-09
Information query
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