Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US14063362Application Date: 2013-10-25
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Publication No.: US09437440B2Publication Date: 2016-09-06
- Inventor: Kurt Sorschag , Daniel Sarlette , Felix Braun , Marcel Heller , Dieter Kaiser , Ingo Meusel , Marko Lemke , Anton Mauder , Helmut Strack
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/20 ; H01L21/36 ; H01L21/306 ; H01L21/02 ; H01L21/311 ; H01L29/66
Abstract:
A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.
Public/Granted literature
- US20140141602A1 Method for Manufacturing a Semiconductor Device Public/Granted day:2014-05-22
Information query
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