Invention Grant
US09437443B2 Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
有权
使用ALD金属，金属氧化物和金属氮化物的低温侧壁图像转印工艺
- Patent Title: Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
- Patent Title (中): 使用ALD金属，金属氧化物和金属氮化物的低温侧壁图像转印工艺
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Application No.: US13916109Application Date: 2013-06-12
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Publication No.: US09437443B2Publication Date: 2016-09-06
- Inventor: Markus Brink , Michael A. Guillorn , Sebastian U. Engelmann , Hiroyuki Miyazoe , Adam M. Pyzyna , Jeffrey W. Sleight
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/033 ; H01L21/02 ; H01L21/3213 ; H01L21/28
Abstract:
A SIT method includes the following steps. An SIT mandrel material is deposited onto a substrate and formed into a plurality of SIT mandrels. A spacer material is conformally deposited onto the substrate covering a top and sides of each of the SIT mandrels. Atomic Layer Deposition (ALD) is used to deposit the SIT spacer at low temperatures. The spacer material is selected from the group including a metal, a metal oxide, a metal nitride and combinations including at least one of the foregoing materials. The spacer material is removed from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels. The SIT mandrels are removed selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers. The pattern of the SIT sidewall spacers is transferred to the underlying stack or substrate.
Public/Granted literature
- US20140367833A1 Low-Temperature Sidewall Image Transfer Process Using ALD Metals, Metal Oxides and Metal Nitrides Public/Granted day:2014-12-18
Information query
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