Slurry for chemical mechanical polishing and chemical mechanical polishing method

Invention Grant

US09437446B2 Slurry for chemical mechanical polishing and chemical mechanical polishing method 有权

Title translation: 浆料用于化学机械抛光和化学机械抛光方法

Please log in to see more content

Patent Title: Slurry for chemical mechanical polishing and chemical mechanical polishing method
Patent Title (中): 浆料用于化学机械抛光和化学机械抛光方法
Application No.: US14404528

Application Date: 2013-05-27
Publication No.: US09437446B2

Publication Date: 2016-09-06
Inventor: Mitsuru Kato , Chihiro Okamoto , Shinya Kato
Applicant: KURARAY CO., LTD.
Applicant Address: JP Kurashiki-shi
Assignee: KURARAY CO., LTD.
Current Assignee: KURARAY CO., LTD.
Current Assignee Address: JP Kurashiki-shi
Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2012-123472 20120530
International Application: PCT/JP2013/064676 WO 20130527
International Announcement: WO2013/180079 WO 20131205
Main IPC: H01L21/3105
IPC: H01L21/3105 ; C09G1/02 ; H01L21/762 ; B24B37/24 ; C09K3/14

Slurry for chemical mechanical polishing and chemical mechanical polishing method

Abstract:

The present invention provides a slurry for chemical mechanical polishing, containing abrasive grain (a), compound (b) having an amino group having a pKa of more than 9, and not less than 3 hydroxyl groups, and water.

Abstract(Chinese):

本发明提供了一种含有磨粒（a），具有pKa大于9个氨基，不少于3个羟基的化合物（b）和水的化学机械抛光用浆料。

Public/Granted literature

US20150147884A1 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD Public/Granted day:2015-05-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理