Invention Grant
- Patent Title: Substrate processing apparatus and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置及半导体装置的制造方法
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Application No.: US12631152Application Date: 2009-12-04
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Publication No.: US09437465B2Publication Date: 2016-09-06
- Inventor: Satoru Takahata , Yukio Ozaki , Reizo Nunozawa
- Applicant: Satoru Takahata , Yukio Ozaki , Reizo Nunozawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-313854 20081210
- Main IPC: H01L21/203
- IPC: H01L21/203 ; H01L21/67 ; C23C16/52 ; C23C16/54 ; G05B19/4063 ; G05B19/418

Abstract:
When a step is delayed, an operator can be rapidly informed of the delay. A substrate processing apparatus comprises a process system configured to process a substrate; a control unit configured to control the process system for performing a plurality of steps; and a manipulation unit configured to monitor a progress of each of the plurality of steps, wherein when a time elapsed after the control unit goes into a hold state exceeds an allowable time previously allocated to the one of the plurality of steps while waiting for a completion of the one of the plurality of steps started by the process system, the control unit transmits an alarm message to the manipulation unit so as to inform the manipulation unit that the allowable time is exceeded, terminates the hold state, and performs a recovery action.
Public/Granted literature
- US20100144145A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-06-10
Information query
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