Invention Grant
- Patent Title: Pattern forming method
- Patent Title (中): 图案形成方法
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Application No.: US14844152Application Date: 2015-09-03
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Publication No.: US09437477B1Publication Date: 2016-09-06
- Inventor: Makoto Aida
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-073718 20150331
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/768 ; H01L21/311 ; H01L21/266 ; G03F7/00 ; G03F7/20 ; G03F7/32
Abstract:
In one embodiment, a pattern forming method includes forming a first film on a substrate that includes a convex portion and a concave portion so as to expose an upper end of the convex portion. The method further includes forming a photosensitive second film on the first film so as to cover the upper end of the convex portion. The method further includes exposing the second film to light. The method further includes developing the second film with a development liquid to form a second pattern of the second film. The method further includes dissolving and removing the first film exposed from the second pattern with a liquid to form a first pattern of the first film.
Information query
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