Invention Grant
US09437481B2 Self-aligned double patterning process for two dimensional patterns
有权
用于二维图案的自对准双重图案化工艺
- Patent Title: Self-aligned double patterning process for two dimensional patterns
- Patent Title (中): 用于二维图案的自对准双重图案化工艺
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Application No.: US14674792Application Date: 2015-03-31
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Publication No.: US09437481B2Publication Date: 2016-09-06
- Inventor: Lei Yuan , Jia Zeng , Youngtag Woo , Jongwook Kye
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/3213 ; H01L21/311 ; H01L21/033 ; H01L21/027
Abstract:
One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a first opening being defined between the first and second spacers and exposing a portion of the hard mask layer and having a longitudinal axis extending in a first direction, forming a block mask covering a middle portion of the first opening, the block mask having a longitudinal axis extending in a second direction different than the first direction, etching the hard mask layer in the presence of the block mask and the first and second spacers to define aligned first and second line segment openings in the hard mask layer extending in the first direction, etching recesses in a dielectric layer disposed beneath the hard mask layer based on the first and second line segment openings, and filling the recesses with a conductive material.
Public/Granted literature
- US20160163584A1 SELF-ALIGNED DOUBLE PATTERNING PROCESS FOR TWO DIMENSIONAL PATTERNS Public/Granted day:2016-06-09
Information query
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