Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14230775Application Date: 2014-03-31
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Publication No.: US09437490B2Publication Date: 2016-09-06
- Inventor: Tsung-Yuan Yu , Hao-Yi Tsai , Chao-Wen Shih , Hung-Yi Kuo , Pi-Lan Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/00

Abstract:
A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the first type pad or the second type pad to a second substrate and a via connected a conductive feature at a different level to the first type pad and the via located within a projection area of the first type pad and directly contacting the first type pad. The semiconductor device also has a dielectric in the substrate and directly contacting the second type pad, wherein the second type pad is floated on the dielectric.
Public/Granted literature
- US20150137355A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-05-21
Information query
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