Invention Grant
- Patent Title: Merged source drain epitaxy
- Patent Title (中): 合并源漏外延
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Application No.: US14727219Application Date: 2015-06-01
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Publication No.: US09437496B1Publication Date: 2016-09-06
- Inventor: Michael P. Chudzik , Brian J. Greene , Edward P. Maciejewski , Kevin McStay , Shreesh Narasimha , Chengwen Pei , Werner A. Rausch
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderson, P.C.
- Agent Yuanmin Cai; Andrew M. Calderon
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/8234 ; H01L27/088 ; H01L21/02
Abstract:
A semiconductor device such as a FinFET includes a plurality of fins formed upon a substrate and a gate covering a portion of the fins. Diamond-shaped volumes are formed on the sidewalls of the fins by epitaxial growth which may be limited to avoid merging of the volumes or where the epitaxy volumes have merged. Because of the difficulties in managing merging of the diamond-shaped volumes, a controlled merger of the diamond-shaped volumes includes depositing an amorphous semiconductor material upon the diamond-shaped volumes and a crystallization process to crystallize the deposited semiconductor material on the diamond-shaped volumes to fabricate controllable and uniformly merged source drain.
Information query
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