Invention Grant
- Patent Title: Semiconductor defect characterization
- Patent Title (中): 半导体缺陷表征
-
Application No.: US14271331Application Date: 2014-05-06
-
Publication No.: US09437506B2Publication Date: 2016-09-06
- Inventor: Uwe Hessinger , Brett Schafman , Wendy Chan
- Applicant: Lattice Semiconductor Corporation
- Applicant Address: US OR Portland
- Assignee: LATTICE SEMICONDUCTOR CORPORATION
- Current Assignee: LATTICE SEMICONDUCTOR CORPORATION
- Current Assignee Address: US OR Portland
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/66

Abstract:
The defect-containing die identified from an inspection layer analysis subsequent to a manufacturing step for a wafer including a plurality of die and as well as the faulty die identified from a fault testing of the wafer are processed to identify a subset of the die that both contain a defect and are faulty. A probability analysis is performed to determine a confidence level of whether the die in the subset are faulty due to their defects.
Public/Granted literature
- US20140335631A1 SEMICONDUCTOR DEFECT CHARACTERIZATION Public/Granted day:2014-11-13
Information query