Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US14126077Application Date: 2012-04-27
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Publication No.: US09437522B2Publication Date: 2016-09-06
- Inventor: Toshikazu Yoshihara , Satoshi Tamagawa , Yasuyuki Oi , Hideki Kobayashi
- Applicant: Toshikazu Yoshihara , Satoshi Tamagawa , Yasuyuki Oi , Hideki Kobayashi
- Applicant Address: JP Saitama-Shi
- Assignee: CALSONIC KANSEI CORPORATION
- Current Assignee: CALSONIC KANSEI CORPORATION
- Current Assignee Address: JP Saitama-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2011-134936 20110617
- International Application: PCT/JP2012/061312 WO 20120427
- International Announcement: WO2012/172875 WO 20121220
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L23/473 ; H01L23/433 ; H01L21/50 ; H01L23/31
Abstract:
A semiconductor device according to the present invention has a semiconductor module 2; a cooling unit 3, the semiconductor module 2 being joined to an upper surface of the cooling unit 3, and a pipe 14, 15 for circulating a refrigerant being fixed to a side surface 20, 22 of the cooling unit 3; and a resin mold layer 4 that covers outer peripheries of the semiconductor module 2 and the cooling unit 3. Further, a protruding portion 25, 26 that protrudes from the side surface 20, 22 of the cooling unit 3 and surrounds the pipe 14, 15 is provided on the side surface 20, 22 of the cooling unit 3.
Public/Granted literature
- US20140225249A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-08-14
Information query
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