Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14263877Application Date: 2014-04-28
-
Publication No.: US09437525B2Publication Date: 2016-09-06
- Inventor: Noriaki Murakami , Toru Oka
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu-shi, Aichi-ken
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-shi, Aichi-ken
- Agency: McGinn IP Law Group PLLC
- Priority: JP2013-95102 20130430; JP2013-224206 20131029
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L21/768 ; H01L21/285 ; H01L29/45 ; H01L29/47 ; H01L29/872 ; H01L29/20
Abstract:
An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of silver.
Public/Granted literature
- US20140319686A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-30
Information query
IPC分类:
