Invention Grant
- Patent Title: Semiconductor memory system
- Patent Title (中): 半导体存储器系统
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Application No.: US14511676Application Date: 2014-10-10
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Publication No.: US09437533B2Publication Date: 2016-09-06
- Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-058140 20110316
- Main IPC: G11C5/02
- IPC: G11C5/02 ; H01L23/498 ; H01L27/115 ; H01L23/31 ; H05K1/02 ; H05K3/30

Abstract:
According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
Public/Granted literature
- US20150021783A1 SEMICONDUCTOR MEMORY SYSTEM Public/Granted day:2015-01-22
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