Invention Grant
- Patent Title: Silicided semiconductor structure and method of forming the same
- Patent Title (中): 硅化半导体结构及其形成方法
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Application No.: US14488020Application Date: 2014-09-16
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Publication No.: US09437593B2Publication Date: 2016-09-06
- Inventor: Jiang Yan , Henning Haffner , Frank Huebinger , Sun-Oo Kim , Richard Lindsay , Klaus Schruefer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/06 ; H01L23/525 ; H01L29/06 ; H01L21/28 ; H01L29/49
Abstract:
A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
Public/Granted literature
- US20150001638A1 Silicided Semiconductor Structure and Method of Forming the Same Public/Granted day:2015-01-01
Information query
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