Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same, array substrate and display device
- Patent Title (中): 薄膜晶体管及其制造方法,阵列基板及显示装置
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Application No.: US14355058Application Date: 2013-06-18
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Publication No.: US09437622B2Publication Date: 2016-09-06
- Inventor: Lei Du
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Hefei, Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Hefei, Anhui
- Agency: Ladas & Parry LLP
- Priority: CN201310098005 20130325
- International Application: PCT/CN2013/077406 WO 20130618
- International Announcement: WO2014/153853 WO 20141002
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L27/12 ; H01L29/786 ; H01L29/66

Abstract:
A thin film transistor and a method for manufacturing the same, an array substrate and a display device that can prevent the semiconductor layer in a channel region from damage. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, an insulator layer, and source/drain electrodes, the insulator layer is provided on the semiconductor layer, covers channel regions of the source/drain electrodes, and is formed of a metal oxide insulator. In this thin film transistor, when water vapor from the air penetrates, the insulator layer formed of the metal oxide insulator will firstly reacts with the water vapor to prevent the metal oxide semiconductor in the channel region from damage.
Public/Granted literature
- US20150279869A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2015-10-01
Information query
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