Invention Grant
US09437661B2 Thin film transistor substrate, display device having the same and method of manufacturing the same
有权
薄膜晶体管基板，具有该薄膜晶体管基板的显示装置及其制造方法
- Patent Title: Thin film transistor substrate, display device having the same and method of manufacturing the same
- Patent Title (中): 薄膜晶体管基板，具有该薄膜晶体管基板的显示装置及其制造方法
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Application No.: US14877044Application Date: 2015-10-07
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Publication No.: US09437661B2Publication Date: 2016-09-06
- Inventor: Do-Hyun Kwon , Min-Jung Lee , Sung-Eun Lee , Il-Jeong Lee , Jung-Kyu Lee , Kwang-Young Choi
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0090563 20130731
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L29/423 ; H01L29/49
Abstract:
A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.
Public/Granted literature
- US20160027856A1 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-28
Information query
IPC分类:
